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PD - 94624B SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE C IRGP50B60PD VCES = 600V VCE(on) typ. = 2.00V @ VGE = 15V IC = 33A Applications * * * * Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power Supplies G E Features * * * * * * * NPT Technology, Positive Temperature Coefficient Lower VCE(SAT) Lower Parasitic Capacitances Minimal Tail Current HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode Tighter Distribution of Parameters Higher Reliability n-channel Equivalent MOSFET Parameters RCE(on) typ. = 61m ID (FET equivalent) = 50A Benefits G C E * Parallel Operation for Higher Current Applications * Lower Conduction Losses and Switching Losses * Higher Switching Frequency up to 150kHz TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 25C IF @ TC = 100C IFRM VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current (Ref. Fig. C.T.4) Clamped Inductive Load Current Max. 600 75 42 150 150 50 25 100 20 370 150 -55 to +150 Units V d A Diode Continous Forward Current Diode Continous Forward Current Maximum Repetitive Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature for 10 sec. Mounting Torque, 6-32 or M3 Screw e V W C 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1 N*m) Thermal Resistance Parameter RJC (IGBT) RJC (Diode) RCS RJA Thermal Resistance Junction-to-Case-(each IGBT) Thermal Resistance Junction-to-Case-(each Diode) Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount) Weight Min. --- --- --- --- --- Typ. --- --- 0.24 --- 6.0 (0.21) Max. 0.34 0.64 --- 40 --- Units C/W g (oz) 1 www.irf.com 07/02/07 IRGP50B60PD Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter V(BR)CES V(BR)CES/TJ Min. 600 -- -- -- -- -- -- Typ. -- 0.61 1.2 2.0 2.4 2.6 3.2 4.0 -7.07 42 5.0 1.0 1.3 1.5 1.3 -- Max. Units -- -- -- 2.2 2.6 2.9 3.6 5.0 -- -- 500 -- 1.7 2.0 1.7 100 nA V V V V Conditions VGE = 0V, IC = 500A 1MHz, Open Collector IC = 33A, VGE = 15V IC = 50A, VGE = 15V IC = 33A, VGE = 15V, TJ = 125C IC = 50A, VGE = 15V, TJ = 125C IC = 250A Ref.Fig Collector-to-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage V/C VGE = 0V, IC = 1mA (25C-125C) 4, 5,6,8,9 RG VCE(on) Internal Gate Resistance Collector-to-Emitter Saturation Voltage VGE(th) VGE(th)/TJ Gate Threshold Voltage Threshold Voltage temp. coefficient Forward Transconductance Collector-to-Emitter Leakage Current 3.0 -- -- -- -- -- 7,8,9 gfe ICES mV/C VCE = VGE, IC = 1.0mA S VCE = 50V, IC = 33A, PW = 80s A mA VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 125C IF = 25A, VGE = 0V IF = 50A, VGE = 0V IF = 25A, VGE = 0V, TJ = 125C VGE = 20V, VCE = 0V 10 VFM IGES Diode Forward Voltage Drop Gate-to-Emitter Leakage Current -- -- -- Switching Characteristics @ TJ = 25C (unless otherwise specified) Parameter Qg Qgc Qge Eon Eoff Etotal td(on) tr td(off) tf Eon Eoff Etotal td(on) tr td(off) tf Cies Coes Cres Coes eff. Coes eff. (ER) RBSOA trr Qrr Irr Total Gate Charge (turn-on) Gate-to-Collector Charge (turn-on) Gate-to-Emitter Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance (Time Related) Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. 240 41 84 360 380 740 34 26 130 43 610 460 1070 33 26 140 50 4750 390 58 280 190 Max. Units 360 82 130 590 420 960 44 36 140 56 880 530 1410 43 36 160 65 -- -- -- -- -- pF VGE = 0V VCC = 30V ns J ns J nC IC = 33A VCC = 400V VGE = 15V Conditions Ref.Fig 17 CT1 IC = 33A, VCC = 390V VGE = +15V, RG = 3.3, L = 210H TJ = 25C CT3 fAA IC = 33A, VCC = 390V VGE = +15V, RG = 3.3, L = 210H TJ = 25C CT3 fAA f IC = 33A, VCC = 390V VGE = +15V, RG = 3.3, L = 210H TJ = 125C IC = 33A, VCC = 390V VGE = +15V, RG = 3.3, L = 200H TJ = 125CAfAA CT3 11,13 WF1,WF2 CT3 12,14 WF1,WF2 16 Effective Output Capacitance (Energy Related) Reverse Bias Safe Operating Area Diode Reverse Recovery Time Diode Reverse Recovery Charge Peak Reverse Recovery Current g g -- -- f = 1Mhz VGE = 0V, VCE = 0V to 480V TJ = 150C, IC = 150A 15 3 CT2 FULL SQUARE -- -- -- -- -- -- 50 105 112 420 4.5 8.0 75 160 375 4200 10 15 A nC ns VCC = 480V, Vp =600V Rg = 22, VGE = +15V to 0V TJ = 25C TJ = 125C TJ = 25C TJ = 125C TJ = 25C TJ = 125C IF = 25A, VR = 200V, di/dt = 200A/s IF = 25A, VR = 200V, di/dt = 200A/s IF = 25A, VR = 200V, di/dt = 200A/s 19 21 19,20,21,22 Notes: CT5 RCE(on) typ. = equivalent on-resistance = VCE(on) typ./ IC, where VCE(on) typ.= 2.00V and IC =33A. ID (FET Equivalent) is the equivalent MOSFET ID rating @ 25C for applications up to 150kHz. These are provided for comparison purposes (only) with equivalent MOSFET solutions. VCC = 80% (VCES), VGE = 20V, L = 28 H, RG = 22 . Pulse width limited by max. junction temperature. Energy losses include "tail" and diode reverse recovery, Data generated with use of Diode 30ETH06. Coes eff. is a fixed capacitance that gives the same charging time as Coes while VCE is rising from 0 to 80% VCES. Coes eff.(ER) is a fixed capacitance that stores the same energy as Coes while VCE is rising from 0 to 80% VCES. 2 www.irf.com IRGP50B60PD 80 70 IC, Collector Current (A) 400 Limited by package 350 300 250 Ptot (W) 60 50 40 30 20 10 0 25 50 75 100 125 150 T C, Case Temperature (C) 200 150 100 50 0 0 20 40 60 80 100 120 140 160 T C (C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature 1000 320 280 240 Fig. 2 - Power Dissipation vs. Case Temperature 100 ICE (A) 200 160 120 80 40 VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V VGE = 6.0V IC A) 10 1 10 100 VCE (V) 1000 0 0 2 4 6 8 10 VCE (V) Fig. 3 - Reverse Bias SOA TJ = 150C; VGE =15V 320 280 240 200 ICE (A) 320 Fig. 4 - Typ. IGBT Output Characteristics TJ = -40C; tp = 80s VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V VGE = 6.0V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V VGE = 6.0V ICE (A) 280 240 200 160 120 80 40 0 160 120 80 40 0 0 2 4 6 8 10 VCE (V) 0 2 4 6 8 10 12 14 16 18 20 VCE (V) Fig. 5 - Typ. IGBT Output Characteristics TJ = 25C; tp = 80s Fig. 6 - Typ. IGBT Output Characteristics TJ = 125C; tp = 80s www.irf.com 3 IRGP50B60PD 600 500 400 300 200 T J = 125C 100 T J = 25C 0 0 5 10 VGE (V) 15 20 0 0 5 10 VGE (V) 15 20 5 VCE (V) ICE (A) 25 T J = 25C T J = 125C 20 15 10 ICE = 15A ICE = 33A ICE = 50A Fig. 7 - Typ. Transfer Characteristics VCE = 50V; tp = 10s 25 100 Fig. 8 - Typical VCE vs. VGE TJ = 25C 20 Instantaneous Forward Current - IF (A) T = 150C J T = 125C J J VCE (V) 15 10 ICE = 15A ICE = 33A ICE = 50A T= 10 25C 5 0 0 5 10 VGE (V) 15 20 1 0.6 A 1.0 1.4 1.8 2.2 2.6 Forward Voltage Drop - V FM (V) Fig. 9 - Typical VCE vs. VGE TJ = 125C 1800 1600 1400 Energy (J) Fig. 10 - Maximum. Diode Forward Characteristics tp = 80s 1000 EON 1200 1000 800 600 400 200 10 20 30 40 IC (A) 50 60 70 EOFF Swiching Time (ns) tdOFF 100 tF tdON tR 10 0 10 20 30 40 50 60 70 IC (A) Fig. 11 - Typ. Energy Loss vs. IC TJ = 125C; L = 200H; VCE = 390V, RG = 3.3; VGE = 15V. Diode clamp used: 30ETH06 (See C.T.3) Fig. 12 - Typ. Switching Time vs. IC TJ = 125C; L = 200H; VCE = 390V, RG = 3.3; VGE = 15V. Diode clamp used: 30ETH06 (See C.T.3) 4 www.irf.com IRGP50B60PD 1800 1600 1400 1000 EOFF Swiching Time (ns) tdOFF Energy (J) 1200 1000 800 600 400 200 0 10 20 30 40 100 EON tF tdON tR 10 0 10 20 30 40 RG () RG () Fig. 13 - Typ. Energy Loss vs. RG TJ = 125C; L = 200H; VCE = 390V, ICE = 33A; VGE = 15V Diode clamp used: 30ETH06 (See C.T.3) 35 30 25 Eoes (J) Fig. 14 - Typ. Switching Time vs. RG TJ = 125C; L = 200H; VCE = 390V, ICE = 33A; VGE = 15V Diode clamp used: 30ETH06 (See C.T.3) 10000 Cies Capacitance (pF) 1000 20 15 10 5 0 0 100 200 300 400 500 600 700 Coes 100 Cres 10 0 100 200 300 400 500 Voltage (V) VCE (V) Fig. 15- Typ. Output Capacitance Stored Energy vs. VCE 16 VGE, Gate-to-Emitter Voltage (V) Fig. 16- Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz 1.5 14 12 10 8 6 4 2 0 0 50 100 VCE = 480V Normalized VCE(on) 150 200 250 300 Q G, Total Gate Charge (nC) 1.3 1.0 0.8 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 T C (C) Fig. 17 - Typical Gate Charge vs. VGE ICE = 33A Fig. 18 - Normalized Typ. VCE(on) vs. Junction Temperature IC = 33A, VGE= 15V www.irf.com 5 IRGP50B60PD 140 VR = 200V TJ = 125C TJ = 25C 120 25 30 VR = 200V TJ = 125C TJ = 25C 100 20 I F = 50A I F = 25A trr- (nC) Irr- ( A) 80 I F = 50A I F = 25A IF = 10A I F = 10A 15 60 10 40 5 20 100 A di f /dt - (A/s) 1000 0 100 A di f /dt - (A/s) 1000 Fig. 19 - Typical Reverse Recovery vs. dif/dt Fig. 20 - Typical Recovery Current vs. dif/dt 1400 VR = 200V TJ = 125C TJ = 25C 10000 VR = 200V TJ = 125C TJ = 25C 1200 1000 I F = 50A I F = 25A I F = 10A Qrr- (nC) 800 di (rec) M/dt- (A /s) 1000 I F = 50A I F = 25A I F = 10A 600 400 200 0 100 A di f /dt - (A/s) 1000 100 100 A di f /dt - (A/s) 1000 Fig. 21 - Typical Stored Charge vs. dif/dt Fig. 22 - Typical di(rec)M/dt vs. dif/dt, 6 www.irf.com IRGP50B60PD 1 D = 0.50 Thermal Response ( Z thJC ) 0.1 0.20 0.10 0.05 0.01 0.02 0.01 J R1 R1 J 1 2 R2 R2 C 2 Ri (C/W) i (sec) 0.0789 0.000277 0.2614 0.040918 1 0.001 SINGLE PULSE ( THERMAL RESPONSE ) Ci= i/Ri Ci i/Ri Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 0.0001 1E-006 1E-005 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 23. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) 1 Thermal Response ( Z thJC ) D = 0.50 0.1 0.20 0.10 0.05 R1 R1 J 1 2 R2 R2 R3 R3 3 C 3 0.01 0.02 0.01 J Ri (C/W) i (sec) 0.0733 0.000420 0.1301 0.1358 0.002274 0.023026 1 2 0.001 Ci= i/Ri Ci i/Ri SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 1E-005 0.0001 0.001 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 24. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) 1000 OPERATION IN THIS AREA LIMITED BY V CE(on) 100sec 1msec 10msec ID, Drain-to-Source Current (A) 100 10 1 100msec 0.1 Tc = 25C Tj = 150C Single Pulse 1 10 100 1000 0.01 VDS, Drain-to-Source Voltage (V) www.irf.com Fig. 25 - Forward SOA, TC = 25C; TJ 150C 7 IRGP50B60PD L L 0 DUT 1K VCC 80 V Rg DUT 480V Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit PFC diode L R= VCC ICM DUT / DRIVER Rg VCC Rg DUT VCC Fig.C.T.3 - Switching Loss Circuit Fig.C.T.4 - Resistive Load Circuit REVERSE RECOVERY CIRCUIT VR = 200V 0.01 L = 70H D.U.T. dif/dt ADJUST D G IRFP250 S Fig. C.T.5 - Reverse Recovery Parameter Test Circuit 8 www.irf.com IRGP50B60PD 700 600 500 90% Ice 400 Vce (V) 300 5% Vce 200 5% Ice 100 0 Eoff Loss -100 -0.05 0 0.05 Time (uS) 0.1 -5 0.15 5 0 10 20 Ice (A) tf Vce 25 35 30 700 tr 600 500 400 Vce (V) 300 10% Ice 200 100 0 -100 3.95 5% Vce Vce 90% Ice Ice 70 60 50 40 30 20 10 0 -10 4.25 Ice (A) Ice 15 Eon Loss 4.05 4.15 Time (uS) Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 25C using Fig. CT.3 Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 25C using Fig. CT.3 3 IF 0 trr ta tb 4 2 Q rr I RRM 0.5 I RRM di(rec)M/dt 0.75 I RRM 5 1 di f /dt 4. Qrr - Area under curve defined by trr and IRRM trr X IRRM Qrr = 2 5. di(rec)M/dt - Peak rate of change of current during tb portion of trr 1. dif/dt - Rate of change of current through zero crossing 2. IRRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current Fig. WF3 - Reverse Recovery Waveform and Definitions www.irf.com 9 IRGP50B60PD TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information @Y6HQG@) UCDTADTA6IADSAQ@"A XDUCA6TT@H7GA GPUA8P9@A$%$& 6TT@H7G@9APIAXXA"$A! DIAUC@A6TT@H7GAGDI@AACA Ir)AAQAAvAhriyAyvrAvv vqvphrAAGrhqArrA DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G GPUA8P9@ Q6SUAIVH7@S ,5)3( A "$C $%AAAAAAAAAAA$& 96U@A8P9@ @6SA A2A! X@@FA"$ GDI@AC TO-247AC package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 07/07 10 www.irf.com |
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